Radiation-Dependent Hot-Carrier Effects

Robert K. Reich; Jay W. Schrankler; Dong Hyuk Ju; M. S. Holt; Gary D. Kirchner

doi:10.1109/EDL.1986.26356

Radiation-Dependent Hot-Carrier Effects

Robert K. Reich, Jay W. Schrankler, Dong Hyuk Ju, M. S. Holt, Gary D. Kirchner

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Abstract

The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

Original language	English (US)
Pages (from-to)	235-237
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/EDL.1986.26356
State	Published - Apr 1986

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title = "Radiation-Dependent Hot-Carrier Effects",

abstract = "The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.",

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AU - Ju, Dong Hyuk

AU - Holt, M. S.

AU - Kirchner, Gary D.

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AB - The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

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Radiation-Dependent Hot-Carrier Effects

Abstract

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