Abstract
The decomposition rate and mechanism of amorphous carbon (a-C) films under laser irradiation were analyzed. Graphitization saturated at early exposures of ∼4 min, while the composition progressed exponentially with the exposure time. It was found that the structure resistance to laser-induced changes increased with the sp s3/sp s2 bonding ratio in the a-C structure. The films sputtered at lower pressure showed higher degree of bonding ratio, higher degree of cross-linking between graphic domains and lower amount of interstitial and weakly bonded compositions. It was also found that reaction rate constant of carbon structure decreases with the bonding ratio in a-C structure.
Original language | English (US) |
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Pages (from-to) | 2239-2245 |
Number of pages | 7 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2004 |