Reduction of Ru underlayer thickness for CoCrPt-SiO2perpendicular recording media

W. K. Shen; Jack Judy; Jianping Wang

doi:10.1109/TMAG.2006.878685

Reduction of Ru underlayer thickness for CoCrPt-SiO₂perpendicular recording media

W. K. Shen, Jack Judy, Jianping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The mechanism of Ta seedlayer to promote (0002) texture in Ru underlayer was found to be mainly due to epitaxial growth of Ru (0002) on Ta (110) with a smooth surface. Relatively high sputtering power and low sputtering pressure as well as an optimized layer thickness are keys to deposit a Ta seedlayer, which can result in a good (0002) texture in Ru layer with a relatively thinner thickness. A Ru intermediate layer deposited at a higher pressure was found to further reduce the overall Ru underlayer thickness without degrading magnetic properties of CoCrPt-SiO₂ perpendicular magnetic recording (PMR) layer. All these results were confirmed by the investigation of surface morphology, microstructure, crystal orientation, and magnetic properties, suggesting that through optimizing the deposition process of Ru/Ta layers, the magnetic “spacing loss” of PMR can be greatly suppressed.

Original language	English (US)
Pages (from-to)	2381-2383
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2006.878685
State	Published - Oct 2006

Keywords

CoCrPt-SiO2 perpendicular media
Ru underlayer
Ta seedlayer
X-ray reflectivity
exchange de-coupling
intermediate layer
perpendicular magnetic recording media
residual gas
surface roughness

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title = "Reduction of Ru underlayer thickness for CoCrPt-SiO2perpendicular recording media",

abstract = "The mechanism of Ta seedlayer to promote (0002) texture in Ru underlayer was found to be mainly due to epitaxial growth of Ru (0002) on Ta (110) with a smooth surface. Relatively high sputtering power and low sputtering pressure as well as an optimized layer thickness are keys to deposit a Ta seedlayer, which can result in a good (0002) texture in Ru layer with a relatively thinner thickness. A Ru intermediate layer deposited at a higher pressure was found to further reduce the overall Ru underlayer thickness without degrading magnetic properties of CoCrPt-SiO2 perpendicular magnetic recording (PMR) layer. All these results were confirmed by the investigation of surface morphology, microstructure, crystal orientation, and magnetic properties, suggesting that through optimizing the deposition process of Ru/Ta layers, the magnetic “spacing loss” of PMR can be greatly suppressed.",

keywords = "CoCrPt-SiO2 perpendicular media, Ru underlayer, Ta seedlayer, X-ray reflectivity, exchange de-coupling, intermediate layer, perpendicular magnetic recording media, residual gas, surface roughness",

author = "Shen, {W. K.} and Jack Judy and Jianping Wang",

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AU - Shen, W. K.

AU - Judy, Jack

AU - Wang, Jianping

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N2 - The mechanism of Ta seedlayer to promote (0002) texture in Ru underlayer was found to be mainly due to epitaxial growth of Ru (0002) on Ta (110) with a smooth surface. Relatively high sputtering power and low sputtering pressure as well as an optimized layer thickness are keys to deposit a Ta seedlayer, which can result in a good (0002) texture in Ru layer with a relatively thinner thickness. A Ru intermediate layer deposited at a higher pressure was found to further reduce the overall Ru underlayer thickness without degrading magnetic properties of CoCrPt-SiO2 perpendicular magnetic recording (PMR) layer. All these results were confirmed by the investigation of surface morphology, microstructure, crystal orientation, and magnetic properties, suggesting that through optimizing the deposition process of Ru/Ta layers, the magnetic “spacing loss” of PMR can be greatly suppressed.

AB - The mechanism of Ta seedlayer to promote (0002) texture in Ru underlayer was found to be mainly due to epitaxial growth of Ru (0002) on Ta (110) with a smooth surface. Relatively high sputtering power and low sputtering pressure as well as an optimized layer thickness are keys to deposit a Ta seedlayer, which can result in a good (0002) texture in Ru layer with a relatively thinner thickness. A Ru intermediate layer deposited at a higher pressure was found to further reduce the overall Ru underlayer thickness without degrading magnetic properties of CoCrPt-SiO2 perpendicular magnetic recording (PMR) layer. All these results were confirmed by the investigation of surface morphology, microstructure, crystal orientation, and magnetic properties, suggesting that through optimizing the deposition process of Ru/Ta layers, the magnetic “spacing loss” of PMR can be greatly suppressed.

KW - CoCrPt-SiO2 perpendicular media

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KW - Ta seedlayer

KW - X-ray reflectivity

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KW - perpendicular magnetic recording media

KW - residual gas

KW - surface roughness

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