Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman; L. M. Miller; M. E. Favaro; M. A. Emanuel; K. Hess; J. J. Coleman

doi:10.1063/1.99931

Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman, L. M. Miller, M. E. Favaro, M. A. Emanuel, K. Hess, J. J. Coleman

Electrical and Computer Engineering

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24 Scopus citations

Abstract

We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

Original language	English (US)
Pages (from-to)	1623-1625
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	17
DOIs	https://doi.org/10.1063/1.99931
State	Published - 1988

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title = "Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode",

abstract = "We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.",

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AU - Favaro, M. E.

AU - Emanuel, M. A.

AU - Hess, K.

AU - Coleman, J. J.

PY - 1988

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AB - We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

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Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

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