Abstract
Depleted silicon-on-insulator (SOI)/CMOS VLSI static random access memory (SRAM) and high density digital ASIC chips are manufactured for space electronics applications in radiation harsh environments using full dose separation by implantation oxygen (SIMOX) materials. The full dose SIMOX wafers were supplied with and without oxide caps from the manufacturers. During the preparation of SIMOX wafers for production, practically all yield limiting issues of SIMOX technology were addressed: particles, high frequency (HF) defects, pipes, roughness, dislocations, thickness uniformity of top silicon and buried oxide, buried oxide pipes, Si islands in the buried oxide and unintentional background doping contamination on top of silicon of the SOI materials.
| Original language | English (US) |
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| Pages | 7-9 |
| Number of pages | 3 |
| State | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: Oct 6 1997 → Oct 9 1997 |
Other
| Other | Proceedings of the 1997 IEEE International SOI Conference |
|---|---|
| City | Fish Camp, CA, USA |
| Period | 10/6/97 → 10/9/97 |