Abstract
This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current-voltage (I-V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I-V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.
Original language | English (US) |
---|---|
Article number | 162102 |
Journal | Applied Physics Letters |
Volume | 121 |
Issue number | 16 |
DOIs | |
State | Published - Oct 17 2022 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2022 Author(s).