Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal

Thomas E. Gage; Prabesh Dulal; Peter A. Solheid; David J. Flannigan; Bethanie J H Stadler

doi:10.1080/21663831.2017.1295285

Si-integrated ultrathin films of phase-pure Y₃Fe₅O₁₂ (YIG) via novel two-step rapid thermal anneal

Thomas E. Gage, Prabesh Dulal, Peter A. Solheid, David J. Flannigan, Bethanie J H Stadler

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Abstract

Traditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield ‘incomplete crystallization’. Here, it is shown that films produced by standard anneals (e.g.: 800°C, 3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During in situ TEM laser annealing, a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results, a two-step rapid thermal anneal was identified (400°C, 3 min; 800°C, 3 min) that successfully produces phase-pure garnet films on SiO₂ on Si.

Original language	English (US)
Pages (from-to)	379-385
Number of pages	7
Journal	Materials Research Letters
Volume	5
Issue number	6
DOIs	https://doi.org/10.1080/21663831.2017.1295285
State	Published - Nov 2 2017

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Publisher Copyright:
© 2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

Keywords

crystallization
in situ TEM
magnetic insulator
rapid thermal annealing
YIG

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title = "Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal",

abstract = "Traditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield {\textquoteleft}incomplete crystallization{\textquoteright}. Here, it is shown that films produced by standard anneals (e.g.: 800°C, 3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During in situ TEM laser annealing, a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results, a two-step rapid thermal anneal was identified (400°C, 3 min; 800°C, 3 min) that successfully produces phase-pure garnet films on SiO2 on Si.",

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AU - Dulal, Prabesh

AU - Solheid, Peter A.

AU - Flannigan, David J.

AU - Stadler, Bethanie J H

PY - 2017/11/2

Y1 - 2017/11/2

N2 - Traditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield ‘incomplete crystallization’. Here, it is shown that films produced by standard anneals (e.g.: 800°C, 3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During in situ TEM laser annealing, a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results, a two-step rapid thermal anneal was identified (400°C, 3 min; 800°C, 3 min) that successfully produces phase-pure garnet films on SiO2 on Si.

AB - Traditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield ‘incomplete crystallization’. Here, it is shown that films produced by standard anneals (e.g.: 800°C, 3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During in situ TEM laser annealing, a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results, a two-step rapid thermal anneal was identified (400°C, 3 min; 800°C, 3 min) that successfully produces phase-pure garnet films on SiO2 on Si.

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Si-integrated ultrathin films of phase-pure Y₃Fe₅O₁₂ (YIG) via novel two-step rapid thermal anneal

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

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