TY - GEN
T1 - Silicon and germanium nanocrystal inks for low cost solar cells
AU - Pi, Xiaodong
AU - Holman, Zachary
AU - Kortshagen, Uwe
PY - 2010
Y1 - 2010
N2 - Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single-or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrates. Silicon (germanium) nanocrystals are formed in a nonthermal plasma. In the plasma environment a Si/Ge precursor is broken down by electron impact, leading to the nucleation and growth of Si or Ge crystals. By adding dopant precursors, p- and n-doped as well as intrinsic crystals can be formed. Organic ligands can be attached in the plasma such that nanocrystals become soluble in organic solvents. These "nanocrystal inks" can be used to form Si or Ge films with ultra-low-cost printing or coating techniques. Film properties of Si/Ge-ink processed films will be discussed. Proof-of-concept demonstrations of solar cells produced from silicon inks will be presented.
AB - Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single-or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrates. Silicon (germanium) nanocrystals are formed in a nonthermal plasma. In the plasma environment a Si/Ge precursor is broken down by electron impact, leading to the nucleation and growth of Si or Ge crystals. By adding dopant precursors, p- and n-doped as well as intrinsic crystals can be formed. Organic ligands can be attached in the plasma such that nanocrystals become soluble in organic solvents. These "nanocrystal inks" can be used to form Si or Ge films with ultra-low-cost printing or coating techniques. Film properties of Si/Ge-ink processed films will be discussed. Proof-of-concept demonstrations of solar cells produced from silicon inks will be presented.
UR - http://www.scopus.com/inward/record.url?scp=80555133172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80555133172&partnerID=8YFLogxK
U2 - 10.1115/ES2010-90445
DO - 10.1115/ES2010-90445
M3 - Conference contribution
AN - SCOPUS:80555133172
SN - 9780791843949
T3 - ASME 2010 4th International Conference on Energy Sustainability, ES 2010
SP - 471
EP - 474
BT - ASME 2010 4th International Conference on Energy Sustainability, ES 2010
T2 - ASME 2010 4th International Conference on Energy Sustainability, ES 2010
Y2 - 17 May 2010 through 22 May 2010
ER -