@inproceedings{a4f1910a717f48b38abcc7af0eb474cd,
title = "Silicon carbide power transistors, characterization for smart grid applications",
abstract = "Silicon carbide (SiC) has superior material properties appropriate for transistor applications at high frequency, high voltage, high power and high temperature. These properties give SiC transistors low conduction losses and fast switching capability. This paper addresses the dynamic characteristics of available SiC power transistors including JFETs, BJTs and MOSFETs which are quite promising for smart grid applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures, load conditions and configurations.",
keywords = "Double Pulse Test, Silicon Carbide Power Transistors",
author = "S. Tiwari and T. Undeland and S. Basu and W. Robbins",
year = "2012",
doi = "10.1109/EPEPEMC.2012.6397497",
language = "English (US)",
isbn = "9781467319713",
series = "15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe",
pages = "LS6d.21--LS6d.28",
booktitle = "15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe",
note = "15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe ; Conference date: 04-09-2012 Through 06-09-2012",
}