TY - JOUR
T1 - Spintronic In-Memory Pattern Matching
AU - Chowdhury, Zamshed I.
AU - Karen Khatamifard, S.
AU - Zhao, Zhengyang
AU - Zabihi, Masoud
AU - Resch, Salonik
AU - Razaviyayn, Meisam
AU - Wang, Jian Ping
AU - Sapatnekar, Sachin
AU - Karpuzcu, Ulya R.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to fuse compute capability with memory where the data reside. This is particularly critical to pattern matching, a key computational step in large-scale data analytics, which involves repetitive search over very large databases residing in memory. Emerging spintronic technologies show remarkable versatility for the tight integration of logic and memory. In this article, we introduce SpinPM, a novel high-density, reconfigurable spintronic in-memory pattern matching spin-orbit torque (SOT)-specifically spin Hall effect (SHE)-substrate, and demonstrate the performance benefit SpinPM can achieve over conventional and near-memory processing systems.
AB - Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to fuse compute capability with memory where the data reside. This is particularly critical to pattern matching, a key computational step in large-scale data analytics, which involves repetitive search over very large databases residing in memory. Emerging spintronic technologies show remarkable versatility for the tight integration of logic and memory. In this article, we introduce SpinPM, a novel high-density, reconfigurable spintronic in-memory pattern matching spin-orbit torque (SOT)-specifically spin Hall effect (SHE)-substrate, and demonstrate the performance benefit SpinPM can achieve over conventional and near-memory processing systems.
KW - Computational random access memory
KW - pattern matching
KW - processing in memory
KW - spin Hall effect (SHE) magnetic tunnel junction (MTJ)
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U2 - 10.1109/JXCDC.2019.2951157
DO - 10.1109/JXCDC.2019.2951157
M3 - Article
AN - SCOPUS:85075537819
SN - 2329-9231
VL - 5
SP - 206
EP - 214
JO - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
JF - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
IS - 2
M1 - 8890687
ER -