TY - JOUR
T1 - Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics
AU - Lyu, Deyuan
AU - Shoup, Jenae E.
AU - Huang, Dingbin
AU - García-Barriocanal, Javier
AU - Jia, Qi
AU - Echtenkamp, William
AU - Rojas, Geoffrey A.
AU - Yu, Guichuan
AU - Zink, Brandon R.
AU - Wang, Xiaojia
AU - Gopman, Daniel B.
AU - Wang, Jian Ping
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
PY - 2023/5/2
Y1 - 2023/5/2
N2 - As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, high-quality L10-FePd and its SAF on Si/SiO2 wafers are prepared by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.
AB - As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, high-quality L10-FePd and its SAF on Si/SiO2 wafers are prepared by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.
KW - L1 -FePd
KW - industry compatibility
KW - perpendicular magnetic anisotropy
KW - spintronics
KW - synthetic antiferromagnets
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U2 - 10.1002/adfm.202214201
DO - 10.1002/adfm.202214201
M3 - Article
C2 - 37200959
AN - SCOPUS:85148502139
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 18
M1 - 2214201
ER -