Strained layer InGaAs channel negative-resistance field-effect transistor

M. E. Favaro; G. E. Fernández; T. K. Higman; P. K. York; L. M. Miller; J. J. Coleman

doi:10.1063/1.342552

Strained layer InGaAs channel negative-resistance field-effect transistor

M. E. Favaro, G. E. Fernández, T. K. Higman, P. K. York, L. M. Miller, J. J. Coleman

Electrical and Computer Engineering

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21 Scopus citations

Abstract

We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In_0.18Ga_0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

Original language	English (US)
Pages (from-to)	378-380
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	1
DOIs	https://doi.org/10.1063/1.342552
State	Published - 1989

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abstract = "We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.",

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AU - Favaro, M. E.

AU - Fernández, G. E.

AU - Higman, T. K.

AU - York, P. K.

AU - Miller, L. M.

AU - Coleman, J. J.

PY - 1989

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AB - We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

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Strained layer InGaAs channel negative-resistance field-effect transistor

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