Study on the effects of different sulfur vaporization temperature on the properties of CuInS                         2                          thin films

Seung Wook Shin; Jun Hee Han; Jeong Yong Lee; Yeon Chan Park; G. L. Agawane; A. V. Moholkar; Myeong Gil Gang; Chae Hwan Jeong; Jin Hyeok Kim; Jae Ho Yun

doi:10.1016/j.apsusc.2013.01.087

Study on the effects of different sulfur vaporization temperature on the properties of CuInS ₂ thin films

Seung Wook Shin, Jun Hee Han, Jeong Yong Lee, Yeon Chan Park, G. L. Agawane, A. V. Moholkar, Myeong Gil Gang, Chae Hwan Jeong, Jin Hyeok Kim, Jae Ho Yun

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

CuInS ₂ (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S ₂ (s) + Ar atmosphere at 425°C for 1 h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as Cu _x S _y , CuIn ₅ S ₈ , and In _x S _y . The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10 ⁴ cm ^-1 , respectively.

Original language	English (US)
Pages (from-to)	572-577
Number of pages	6
Journal	Applied Surface Science
Volume	270
DOIs	https://doi.org/10.1016/j.apsusc.2013.01.087
State	Published - Apr 1 2013
Externally published	Yes

Bibliographical note

Funding Information:
This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No.: 20124010203180) and partially supported by a grant from the Fundamental R & D program for Core Technology of Materials funded by the Ministry of Knowledge Economy (10037233).

Keywords

Low cost process
S powder
Sulfurization
Thin film solar cells (TFSCs)
Vaporization temperature

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Shin, S. W., Han, J. H., Lee, J. Y., Park, Y. C., Agawane, G. L., Moholkar, A. V., Gang, M. G., Jeong, C. H., Kim, J. H., & Yun, J. H. (2013). Study on the effects of different sulfur vaporization temperature on the properties of CuInS ₂ thin films Applied Surface Science, 270, 572-577. https://doi.org/10.1016/j.apsusc.2013.01.087

Study on the effects of different sulfur vaporization temperature on the properties of CuInS ₂ thin films . / Shin, Seung Wook; Han, Jun Hee; Lee, Jeong Yong et al.
In: Applied Surface Science, Vol. 270, 01.04.2013, p. 572-577.

Research output: Contribution to journal › Article › peer-review

Shin, SW, Han, JH, Lee, JY, Park, YC, Agawane, GL, Moholkar, AV, Gang, MG, Jeong, CH, Kim, JH & Yun, JH 2013, ' Study on the effects of different sulfur vaporization temperature on the properties of CuInS ₂ thin films ', Applied Surface Science, vol. 270, pp. 572-577. https://doi.org/10.1016/j.apsusc.2013.01.087

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title = " Study on the effects of different sulfur vaporization temperature on the properties of CuInS 2 thin films ",

abstract = " CuInS 2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S 2 (s) + Ar atmosphere at 425°C for 1 h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as Cu x S y , CuIn 5 S 8 , and In x S y . The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10 4 cm -1 , respectively.",

keywords = "Low cost process, S powder, Sulfurization, Thin film solar cells (TFSCs), Vaporization temperature",

author = "Shin, {Seung Wook} and Han, {Jun Hee} and Lee, {Jeong Yong} and Park, {Yeon Chan} and Agawane, {G. L.} and Moholkar, {A. V.} and Gang, {Myeong Gil} and Jeong, {Chae Hwan} and Kim, {Jin Hyeok} and Yun, {Jae Ho}",

note = "Funding Information: This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No.: 20124010203180) and partially supported by a grant from the Fundamental R & D program for Core Technology of Materials funded by the Ministry of Knowledge Economy (10037233).",

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AU - Shin, Seung Wook

AU - Han, Jun Hee

AU - Lee, Jeong Yong

AU - Park, Yeon Chan

AU - Agawane, G. L.

AU - Moholkar, A. V.

AU - Gang, Myeong Gil

AU - Jeong, Chae Hwan

AU - Kim, Jin Hyeok

AU - Yun, Jae Ho

N1 - Funding Information: This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No.: 20124010203180) and partially supported by a grant from the Fundamental R & D program for Core Technology of Materials funded by the Ministry of Knowledge Economy (10037233).

PY - 2013/4/1

Y1 - 2013/4/1

N2 - CuInS 2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S 2 (s) + Ar atmosphere at 425°C for 1 h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as Cu x S y , CuIn 5 S 8 , and In x S y . The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10 4 cm -1 , respectively.

AB - CuInS 2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S 2 (s) + Ar atmosphere at 425°C for 1 h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as Cu x S y , CuIn 5 S 8 , and In x S y . The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10 4 cm -1 , respectively.

KW - Low cost process

KW - S powder

KW - Sulfurization

KW - Thin film solar cells (TFSCs)

KW - Vaporization temperature

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