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Abstract
We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity.
Original language | English (US) |
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Pages (from-to) | 78-82 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 130 |
DOIs | |
State | Published - Mar 15 2017 |
Bibliographical note
Publisher Copyright:© 2016 Acta Materialia Inc.
Keywords
- Brittle-to-ductile transition
- Electron microscopy
- Fracture
- Nanomechanical testing
- Silicon
How much support was provided by MRSEC?
- Shared
Reporting period for MRSEC
- Period 3