Abstract
Computational modeling and novel experiments, when performed together, can enable the identification of new, fundamental mechanisms important for the growth of bulk crystals from the melt. In this paper, we present a compelling example of this synergy via the discovery of previously unascertained physical mechanisms that govern the engulfment of silicon carbide particles during the growth of crystalline silicon.
| Original language | English (US) |
|---|---|
| Article number | 012001 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 355 |
| Issue number | 1 |
| DOIs | |
| State | Published - May 8 2018 |
| Externally published | Yes |
| Event | 8th International Scientific Colloquium on Modelling for Materials Processing - Riga, Latvia Duration: Sep 21 2017 → Sep 22 2017 |
Bibliographical note
Publisher Copyright:© Published under licence by IOP Publishing Ltd.