The ultrafast dynamics of image potential state electrons at the dimethylsulfoxide/Ag(111) interface

Matthew L. Strader; Sean Garrett-Roe; Paul Szymanski; Steven T. Shipman; James E. Johns; Aram Yang; Eric Muller; Charles B. Harris

doi:10.1021/jp7116664

The ultrafast dynamics of image potential state electrons at the dimethylsulfoxide/Ag(111) interface

Matthew L. Strader, Sean Garrett-Roe, Paul Szymanski, Steven T. Shipman, James E. Johns, Aram Yang, Eric Muller, Charles B. Harris

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

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Abstract

Angle-resolved two-photon photoemission was used to study the energy relaxation, population decay, and localization dynamics of image potential state (IPS) electrons in ultrathin films of dimethylsulfoxide (DMSO) on an Ag(111) substrate. Dynamic energy shifts of 50 ±10 meV and 220 ±10 meV were observed for n = 1 IPS electrons at one monolayer and two monolayer coverages of DMSO, respectively. The difference in energy shifts is attributed to rotational hindrance of the molecular dipole in the chemisorptive first monolayer. The finding confirms the proposed mechanism for the low differential capacitance of dimethylsulfoxide at noble metal interfaces in solution. A novel description of the IPS as a surface capacitance is presented to facilitate comparisons with electrochemical systems.

Original language	English (US)
Pages (from-to)	6880-6886
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	17
DOIs	https://doi.org/10.1021/jp7116664
State	Published - May 1 2008

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abstract = "Angle-resolved two-photon photoemission was used to study the energy relaxation, population decay, and localization dynamics of image potential state (IPS) electrons in ultrathin films of dimethylsulfoxide (DMSO) on an Ag(111) substrate. Dynamic energy shifts of 50 ±10 meV and 220 ±10 meV were observed for n = 1 IPS electrons at one monolayer and two monolayer coverages of DMSO, respectively. The difference in energy shifts is attributed to rotational hindrance of the molecular dipole in the chemisorptive first monolayer. The finding confirms the proposed mechanism for the low differential capacitance of dimethylsulfoxide at noble metal interfaces in solution. A novel description of the IPS as a surface capacitance is presented to facilitate comparisons with electrochemical systems.",

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AU - Strader, Matthew L.

AU - Garrett-Roe, Sean

AU - Szymanski, Paul

AU - Shipman, Steven T.

AU - Johns, James E.

AU - Yang, Aram

AU - Muller, Eric

AU - Harris, Charles B.

PY - 2008/5/1

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N2 - Angle-resolved two-photon photoemission was used to study the energy relaxation, population decay, and localization dynamics of image potential state (IPS) electrons in ultrathin films of dimethylsulfoxide (DMSO) on an Ag(111) substrate. Dynamic energy shifts of 50 ±10 meV and 220 ±10 meV were observed for n = 1 IPS electrons at one monolayer and two monolayer coverages of DMSO, respectively. The difference in energy shifts is attributed to rotational hindrance of the molecular dipole in the chemisorptive first monolayer. The finding confirms the proposed mechanism for the low differential capacitance of dimethylsulfoxide at noble metal interfaces in solution. A novel description of the IPS as a surface capacitance is presented to facilitate comparisons with electrochemical systems.

AB - Angle-resolved two-photon photoemission was used to study the energy relaxation, population decay, and localization dynamics of image potential state (IPS) electrons in ultrathin films of dimethylsulfoxide (DMSO) on an Ag(111) substrate. Dynamic energy shifts of 50 ±10 meV and 220 ±10 meV were observed for n = 1 IPS electrons at one monolayer and two monolayer coverages of DMSO, respectively. The difference in energy shifts is attributed to rotational hindrance of the molecular dipole in the chemisorptive first monolayer. The finding confirms the proposed mechanism for the low differential capacitance of dimethylsulfoxide at noble metal interfaces in solution. A novel description of the IPS as a surface capacitance is presented to facilitate comparisons with electrochemical systems.

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The ultrafast dynamics of image potential state electrons at the dimethylsulfoxide/Ag(111) interface

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