Theoretical and experimental investigations of the heterostructure hot electron diode

M. A. Emanuel; T. K. Higman; J. M. Higman; J. M. Kolodzey; J. J. Coleman; K. Hess

doi:10.1016/0038-1101(88)90347-4

Theoretical and experimental investigations of the heterostructure hot electron diode

M. A. Emanuel, T. K. Higman, J. M. Higman, J. M. Kolodzey, J. J. Coleman, K. Hess

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

In this work, experimental data is presented on the heterostructure hot electron diode (H²ED), a two-terminal device that exhibits S-shaped negative differential resistance due to a field dependent transition between the current conduction modes of tunneling and thermionic emission of hot electrons in a two-layer AlGaAs heterostructure. Results are presented on various single and multiple period H²ED structures fabricated from wafers grown by metalorganic chemical vapor deposition (MOCVD). Preliminary microwave characterization of the H²ED on non-optimized structures have resulted in test-fixture-limited oscillation at frequencies greater than 17GHz.

Original language	English (US)
Pages (from-to)	589-592
Number of pages	4
Journal	Solid State Electronics
Volume	31
Issue number	3-4
DOIs	https://doi.org/10.1016/0038-1101(88)90347-4
State	Published - 1988

Keywords

H2ED
MOCVD
hot electron
microwave
thermionic emission
tunneling

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title = "Theoretical and experimental investigations of the heterostructure hot electron diode",

abstract = "In this work, experimental data is presented on the heterostructure hot electron diode (H2ED), a two-terminal device that exhibits S-shaped negative differential resistance due to a field dependent transition between the current conduction modes of tunneling and thermionic emission of hot electrons in a two-layer AlGaAs heterostructure. Results are presented on various single and multiple period H2ED structures fabricated from wafers grown by metalorganic chemical vapor deposition (MOCVD). Preliminary microwave characterization of the H2ED on non-optimized structures have resulted in test-fixture-limited oscillation at frequencies greater than 17GHz.",

keywords = "H2ED, MOCVD, hot electron, microwave, thermionic emission, tunneling",

author = "Emanuel, {M. A.} and Higman, {T. K.} and Higman, {J. M.} and Kolodzey, {J. M.} and Coleman, {J. J.} and K. Hess",

year = "1988",

doi = "10.1016/0038-1101(88)90347-4",

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T1 - Theoretical and experimental investigations of the heterostructure hot electron diode

AU - Emanuel, M. A.

AU - Higman, T. K.

AU - Higman, J. M.

AU - Kolodzey, J. M.

AU - Coleman, J. J.

AU - Hess, K.

PY - 1988

Y1 - 1988

N2 - In this work, experimental data is presented on the heterostructure hot electron diode (H2ED), a two-terminal device that exhibits S-shaped negative differential resistance due to a field dependent transition between the current conduction modes of tunneling and thermionic emission of hot electrons in a two-layer AlGaAs heterostructure. Results are presented on various single and multiple period H2ED structures fabricated from wafers grown by metalorganic chemical vapor deposition (MOCVD). Preliminary microwave characterization of the H2ED on non-optimized structures have resulted in test-fixture-limited oscillation at frequencies greater than 17GHz.

AB - In this work, experimental data is presented on the heterostructure hot electron diode (H2ED), a two-terminal device that exhibits S-shaped negative differential resistance due to a field dependent transition between the current conduction modes of tunneling and thermionic emission of hot electrons in a two-layer AlGaAs heterostructure. Results are presented on various single and multiple period H2ED structures fabricated from wafers grown by metalorganic chemical vapor deposition (MOCVD). Preliminary microwave characterization of the H2ED on non-optimized structures have resulted in test-fixture-limited oscillation at frequencies greater than 17GHz.

KW - H2ED

KW - MOCVD

KW - hot electron

KW - microwave

KW - thermionic emission

KW - tunneling

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SP - 589

EP - 592

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3-4

ER -

Theoretical and experimental investigations of the heterostructure hot electron diode

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