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Abstract
We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.
Original language | English (US) |
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Pages (from-to) | 985-991 |
Number of pages | 7 |
Journal | Nano letters |
Volume | 17 |
Issue number | 2 |
DOIs | |
State | Published - Feb 8 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
Keywords
- black phosphorus
- extraordinary optical transmission
- nanogap
- photodetector
- plasmonics
- Silicon photonics
How much support was provided by MRSEC?
- Shared
Reporting period for MRSEC
- Period 3
PubMed: MeSH publication types
- Letter