Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors

Jaewon Jang; Rungrot Kitsomboonloha; Sarah L. Swisher; Eung Seok Park; Hongki Kang; Vivek Subramanian

doi:10.1002/adma.201202997

Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors

Jaewon Jang, Rungrot Kitsomboonloha, Sarah L. Swisher, Eung Seok Park, Hongki Kang, Vivek Subramanian

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

148 Scopus citations

Abstract

This work employs novel SnO₂ gel-like precursors in conjunction with sol-gel deposited ZrO₂ gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm² V ^-1 s^-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and I_on/I_off of 10⁴∼10⁵.

Original language	English (US)
Pages (from-to)	1042-1047
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	7
DOIs	https://doi.org/10.1002/adma.201202997
State	Published - Feb 20 2013

Keywords

metal oxides
sol-gel process
solution process
thin film transistors
transparent

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abstract = "This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.",

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AU - Kang, Hongki

AU - Subramanian, Vivek

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