Abstract
In this experiment the ultrahigh vacuum environment of a molecular-beam epitaxy reactor equipped with ammonia was used to thermally nitride silicon. The resulting thin silicon nitride films were incorporated as gate insulators of metal-insulator-semiconductor field-effect transistors. The fabrication of field-effect transistors enabled very accurate interface state characterization of the silicon-silicon nitride interface by the charge pumping technique. The ammonia nitridation of silicon was also investigated as a surface passivation technique for scanning probe microscope (both conductive tip atomic force microscope and scanning tunneling microscope) lithography techniques.
Original language | English (US) |
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Pages (from-to) | 786-788 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 13 |
Issue number | 2 |
DOIs | |
State | Published - Mar 1995 |
Event | Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA Duration: Oct 10 1994 → Oct 12 1994 |
Bibliographical note
Copyright:Copyright 2004 Elsevier B.V., All rights reserved.