Understanding Distance-Dependent Variations for Analog Circuits in a FinFET Technology

Meghna Madhusudan, Jitesh Poojary, Arvind K. Sharma, S. Ramprasath, Kishor Kunal, Sachin S. Sapatnekar, Ramesh Harjani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Analog circuits are sensitive to device variations. Random device variations are well modeled and quantified in the literature, but analog-relevant distance-dependent device variation measurements have not been reported for newer technology nodes. To reduce the impact of distance-dependent variations, layout patterns such as common-centroid are often used. However, these patterns use larger area and have higher parasitics than clustered (NonCC) patterns in FinFET technologies where unit parasitics are higher and design rules are more complex. This work measures variations on multiple dies in a 12nm FinFET technology, each with about 10,000 devices, and models the distance-dependent component. We then apply these findings to show that NonCC patterns can be used in lower-resolution DACs to meet mismatch specifications while reducing layout area.

Original languageEnglish (US)
Title of host publicationESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference
PublisherEditions Frontieres
Pages69-72
Number of pages4
ISBN (Electronic)9798350304237
DOIs
StatePublished - 2023
Event53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023 - Lisbon, Portugal
Duration: Sep 11 2023Sep 14 2023

Publication series

NameEuropean Solid-State Device Research Conference
Volume2023-September
ISSN (Print)1930-8876

Conference

Conference53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023
Country/TerritoryPortugal
CityLisbon
Period9/11/239/14/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • DACs
  • Device variations
  • FinFET
  • analog circuits
  • common-centroid
  • measurement
  • modeling

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