TY - JOUR
T1 - UV and air stability of high-efficiency photoluminescent silicon nanocrystals
AU - Yang, Jihua
AU - Liptak, Richard
AU - Rowe, David
AU - Wu, Jeslin
AU - Casey, James
AU - Witker, David
AU - Campbell, Stephen A.
AU - Kortshagen, Uwe
N1 - Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2014/12/30
Y1 - 2014/12/30
N2 - The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.
AB - The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.
KW - Nonthermal plasma
KW - Phosphorous (P) doping
KW - Photoluminescence quantum yield
KW - Silicon nanocrystals
KW - UV stability
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U2 - 10.1016/j.apsusc.2014.08.027
DO - 10.1016/j.apsusc.2014.08.027
M3 - Article
AN - SCOPUS:84919427675
SN - 0169-4332
VL - 323
SP - 54
EP - 58
JO - Applied Surface Science
JF - Applied Surface Science
ER -