Abstract
The high- κ stack consisting of an optional nitride interfacial layer and a Hf O2 layer was studied. The result shows that nitride or oxynitride interfacial layers can be controllably formed down to a few angstroms. The growth of both interfacial layers is self-limited. The introduction of nitric oxide with hafnium t -butoxide during the high- κ deposition leads to smaller effective oxide thickness (EOT) and gate leakage current. EOTs below 1.0 nm have been achieved with this combination of sources. The beneficial effect of nitric oxide can be explained in terms of reduced interfacial EOT, reduction of carbon contamination, and possibly a small trace amount of nitrogen incorporation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 418-423 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 24 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2006 |
Bibliographical note
Funding Information:The authors wish to acknowledge IBM and the Semiconductor Research Corporation for support of this work through Contract No. 1060, especially Dr. Rajarao Jammy. This work was performed at the Minnesota NanoFabrication Center, which received partial support from NSF through the National Nano Infrastructure Network.