Plasma passivation of III-V semiconductor surfaces

Engineering & Materials Science

• III-V semiconductors 100%
• Passivation 72%
• Plasmas 55%
• Photoluminescence 19%
• Electronic properties 18%
• Interface states 18%
• Surface states 17%
• Fourier transform infrared spectroscopy 14%
• Atoms 12%
• Semiconductor materials 10%
• Oxides 10%
• Hydrogen 9%
• Flow rate 9%
• Substrates 8%
• Monitoring 6%
• Temperature 4%

Chemical Compounds

• Chemical Passivation 61%
• Semiconductor 45%
• Plasma 37%
• Surface 19%
• Interface State 18%
• Surface State 14%
• Attenuated Total Reflection 13%
• Hydrogen Atom 10%
• Electronic Property 9%
• Flow Kinetics 9%
• Photoluminescence 9%
• Pressure 6%
• Fourier Transform Infrared Spectroscopy 6%
• Oxide 6%

Physics & Astronomy

• passivity 55%
• electronics 10%
• hydrogen atoms 9%
• infrared spectroscopy 9%
• flow velocity 8%
• insulators 7%
• photoluminescence 7%
• oxides 6%
• excitation 4%
• performance 4%
• temperature 2%