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Plasma passivation of III-V semiconductor surfaces
E. S. Aydil
, R. A. Gottscho
Chemical Engineering and Materials Science
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Scopus citations
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Engineering & Materials Science
Atoms
12%
Electronic properties
18%
Flow rate
9%
Fourier transform infrared spectroscopy
14%
Hydrogen
9%
III-V semiconductors
100%
Interface states
18%
Monitoring
6%
Oxides
10%
Passivation
72%
Photoluminescence
19%
Plasmas
55%
Semiconductor materials
10%
Substrates
8%
Surface states
17%
Temperature
4%
Chemical Compounds
Attenuated Total Reflection
13%
Chemical Passivation
61%
Electronic Property
9%
Flow Kinetics
9%
Fourier Transform Infrared Spectroscopy
6%
Hydrogen Atom
10%
Interface State
18%
Oxide
6%
Photoluminescence
9%
Plasma
37%
Pressure
6%
Semiconductor
45%
Surface
19%
Surface State
14%
Physics & Astronomy
electronics
10%
excitation
4%
flow velocity
8%
hydrogen atoms
9%
infrared spectroscopy
9%
insulators
7%
oxides
6%
passivity
55%
performance
4%
photoluminescence
7%
temperature
2%